onsemi · FETs & Power MOSFETs · MPN NVBGS1D2N08H
No reviews yet — be the first to review onsemi NVBGS1D2N08H.
| Gate Charge(Qg) | 160nC@10V |
|---|---|
| Drain to Source Voltage | 80V |
| Output Capacitance(Coss) | 1.605nF |
| Current - Continuous Drain(Id) | 290A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 130W |
| Reverse Transfer Capacitance (Crss@Vds) | 45pF |
| RDS(on) | 1.34mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 10.83nF |
| Type | N-Channel |
80V 290A 4V 130W 1.34mΩ@10V 1 N-channel N-Channel D2PAK-7 Single FETs, MOSFETs RoHS