onsemi · FETs & Power MOSFETs · MPN NVBG160N120SC1
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| Gate Charge(Qg) | - |
|---|---|
| Drain to Source Voltage | 1.2kV |
| Current - Continuous Drain(Id) | 19.5A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.3V |
| Pd - Power Dissipation | 136W |
| Reverse Transfer Capacitance (Crss@Vds) | 5.87pF |
| RDS(on) | 160mΩ@20V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 678pF |
1.2kV 19.5A 4.3V 136W 160mΩ@20V 1 N-channel TO-263-7 Single FETs, MOSFETs RoHS