onsemi · FETs & Power MOSFETs · MPN NVBG080N120SC1
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| Gate Charge(Qg) | - |
|---|---|
| Drain to Source Voltage | 1.2kV |
| Current - Continuous Drain(Id) | 30A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.3V |
| Pd - Power Dissipation | 179W |
| Reverse Transfer Capacitance (Crss@Vds) | 7.9pF |
| RDS(on) | 80mΩ@20V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.154nF |
1.2kV 30A 4.3V 179W 80mΩ@20V 1 N-channel TO-263-7 Single FETs, MOSFETs RoHS