onsemi NVBG060N090SC1

onsemi · FETs & Power MOSFETs · MPN NVBG060N090SC1

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage900V
Current - Continuous Drain(Id)5.8A;44A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4.3V
Pd - Power Dissipation3.6W;211W
Reverse Transfer Capacitance (Crss@Vds)12pF
RDS(on)43mΩ@18V
Number1 N-channel
Input Capacitance(Ciss)1.8nF

Technical details

900V 4.3V 43mΩ@18V 1 N-channel TO-263-7 Single FETs, MOSFETs RoHS

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