onsemi · FETs & Power MOSFETs · MPN NVBG032N065M3S
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 55nC |
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 113pF |
| Current - Continuous Drain(Id) | 52A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 200W |
| Reverse Transfer Capacitance (Crss@Vds) | 9pF |
| RDS(on) | 44mΩ |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.409nF |
650V 52A 4V 200W 44mΩ 1 N-channel N-Channel D2PAK Single FETs, MOSFETs RoHS