onsemi NVBG022N120M3S

onsemi · FETs & Power MOSFETs · MPN NVBG022N120M3S

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Specifications

Gate Charge(Qg)148nC
Drain to Source Voltage1.2kV
Current - Continuous Drain(Id)58A
Output Capacitance(Coss)148pF
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4.4V
Pd - Power Dissipation234W
RDS(on)30mΩ
Reverse Transfer Capacitance (Crss@Vds)14pF
Number1 N-channel
Input Capacitance(Ciss)3.2nF
TypeN-Channel

Technical details

1.2kV 58A 4.4V 234W 30mΩ 1 N-channel N-Channel D2PAK7(TO-263-7L-HV) Single FETs, MOSFETs RoHS

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