onsemi NVBG020N120SC1

onsemi · FETs & Power MOSFETs · MPN NVBG020N120SC1

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Specifications

Drain to Source Voltage1.2kV
Gate Charge(Qg)220nC
Current - Continuous Drain(Id)98A
Output Capacitance(Coss)258pF
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4.3V
Pd - Power Dissipation468W
RDS(on)28mΩ
Reverse Transfer Capacitance (Crss@Vds)24pF
Number1 N-channel
Input Capacitance(Ciss)2.943nF
TypeN-Channel

Technical details

1.2kV 98A 4.3V 468W 28mΩ 1 N-channel N-Channel D2PAK-7 Single FETs, MOSFETs RoHS

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