onsemi · FETs & Power MOSFETs · MPN NVB5405NT4G
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| Gate Charge(Qg) | 88nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 116A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 150W |
| Reverse Transfer Capacitance (Crss@Vds) | 600pF |
| RDS(on) | 5.8mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4nF |
| Type | N-Channel |
40V 116A 3.5V 150W 5.8mΩ@10V 1 N-channel N-Channel D2PAK Single FETs, MOSFETs RoHS