onsemi · FETs & Power MOSFETs · MPN NVB5404NT4G
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| Gate Charge(Qg) | 125nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Output Capacitance(Coss) | 1.7nF |
| Current - Continuous Drain(Id) | 167A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 254W |
| Reverse Transfer Capacitance (Crss@Vds) | 1nF |
| RDS(on) | 4.5mΩ@10V |
| Input Capacitance(Ciss) | 7nF |
| Type | N-Channel |
40V 167A 3.5V 254W 4.5mΩ@10V N-Channel Single FETs, MOSFETs RoHS