onsemi · FETs & Power MOSFETs · MPN NVB260N65S3
No reviews yet — be the first to review onsemi NVB260N65S3.
| Gate Charge(Qg) | 24nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 12A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | - |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 260mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.01nF |
| Type | N-Channel |
650V 12A 4.5V 260mΩ@10V 1 N-channel N-Channel D2PAK-3(TO-263-3) Single FETs, MOSFETs RoHS