onsemi · FETs & Power MOSFETs · MPN NVB095N65S3F
No reviews yet — be the first to review onsemi NVB095N65S3F.
| Gate Charge(Qg) | 66nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 36A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 272W |
| Reverse Transfer Capacitance (Crss@Vds) | 7pF |
| RDS(on) | 86mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.02nF |
| Type | N-Channel |
650V 36A 5V 272W 86mΩ@10V 1 N-channel N-Channel D2PAK-3(TO-263-3) Single FETs, MOSFETs RoHS