onsemi · FETs & Power MOSFETs · MPN NVATS68301PZT4G
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| Gate Charge(Qg) | 55nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 31A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 84W |
| Reverse Transfer Capacitance (Crss@Vds) | 125pF |
| RDS(on) | 57mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 2.85nF |
100V 31A 3.5V 84W 57mΩ@10V 1 P-Channel DPAK Single FETs, MOSFETs RoHS