onsemi · FETs & Power MOSFETs · MPN NVATS5A113PLZT4G
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| Gate Charge(Qg) | 55nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 38A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Pd - Power Dissipation | 60W |
| Reverse Transfer Capacitance (Crss@Vds) | 195pF |
| RDS(on) | 22.5mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 2.4nF |
60V 38A 1.2V 60W 22.5mΩ@10V 1 P-Channel TO-252-3 Single FETs, MOSFETs RoHS