onsemi · FETs & Power MOSFETs · MPN NVATS5A112PLZT4G
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| Output Capacitance(Coss) | 155pF |
|---|---|
| Pd - Power Dissipation | 48W |
| Configuration | - |
| Gate Charge(Qg) | 33.5nC@10V |
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 27A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Reverse Transfer Capacitance (Crss@Vds) | 125pF |
| RDS(on) | 43mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.45nF |
48W 60V 27A 1.2V 43mΩ@10V 1 P-Channel P-Channel TO-252-3 Single FETs, MOSFETs RoHS