onsemi · FETs & Power MOSFETs · MPN NVATS5A106PLZT4G
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| Gate Charge(Qg) | 29nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 33A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.6V |
| Pd - Power Dissipation | 48W |
| Reverse Transfer Capacitance (Crss@Vds) | 150pF |
| RDS(on) | 19mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.38nF |
40V 33A 2.6V 48W 19mΩ@10V 1 P-Channel DPAK Single FETs, MOSFETs RoHS