onsemi NVA4153NT1G

onsemi · FETs & Power MOSFETs · MPN NVA4153NT1G

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Specifications

Gate Charge(Qg)1.82nC@4.5V
Drain to Source Voltage20V
Current - Continuous Drain(Id)915mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))450mV
Pd - Power Dissipation300mW
RDS(on)127mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)12pF
Number1 N-channel
Input Capacitance(Ciss)110pF

Technical details

20V 915mA 450mV 300mW 127mΩ@4.5V 1 N-channel SC-75-3 Single FETs, MOSFETs RoHS

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