onsemi · FETs & Power MOSFETs · MPN NTZS3151PT1G
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| Gate Charge(Qg) | 5.6nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 860mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 210mW |
| Reverse Transfer Capacitance (Crss@Vds) | 38pF |
| RDS(on) | 150mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 458pF |
| Type | P-Channel |
P-Channel 20V 860mA 210mW Surface Mount SOT-563