onsemi NTZD3155CT1G

onsemi · FETs & Power MOSFETs · MPN NTZD3155CT1G

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Specifications

Current - Continuous Drain(Id)540mA
RDS(on)900mΩ@4.5V
Pd - Power Dissipation250mW
Gate Threshold Voltage (Vgs(th))1V
Drain to Source Voltage20V
TypeN-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds)25pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)175pF
Gate Charge(Qg)2.5nC@4.5V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)30pF

Technical details

N-Channel+P-Channel Array 20V 540mA 250mW Surface Mount SOT-563

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