onsemi NTZD3154NT1G

onsemi · FETs & Power MOSFETs · MPN NTZD3154NT1G

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Specifications

Current - Continuous Drain(Id)540mA
Pd - Power Dissipation250mW
RDS(on)900mΩ@1.8V
Gate Threshold Voltage (Vgs(th))1V
Drain to Source Voltage20V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)20pF
Number2 N-Channel
Input Capacitance(Ciss)150pF
Gate Charge(Qg)2.5nC@4.5V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)25pF

Technical details

N-Channel Array 20V 540mA 250mW Surface Mount SOT-563

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