onsemi NTZD3152PT1G

onsemi · FETs & Power MOSFETs · MPN NTZD3152PT1G

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Specifications

Current - Continuous Drain(Id)430mA
Pd - Power Dissipation250mW
RDS(on)2Ω@1.8V
Gate Threshold Voltage (Vgs(th))1V
Drain to Source Voltage20V
TypeP-Channel
Reverse Transfer Capacitance (Crss@Vds)20pF
Number2 P-Channel
Input Capacitance(Ciss)175pF
Gate Charge(Qg)2.5nC@4.5V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)30pF

Technical details

430mA 250mW 2Ω@1.8V 1V 2 P-Channel SOT-563 FET, MOSFET Arrays RoHS

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