onsemi NTUD3170NZT5G

onsemi · FETs & Power MOSFETs · MPN NTUD3170NZT5G

No reviews yet — be the first to review onsemi NTUD3170NZT5G.

Specifications

Current - Continuous Drain(Id)220mA
Pd - Power Dissipation200mW
RDS(on)4.5Ω@1.5V
Gate Threshold Voltage (Vgs(th))1V
Drain to Source Voltage20V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)2.6pF
Number2 N-Channel
Input Capacitance(Ciss)12.5pF
Gate Charge(Qg)-
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)3.6pF

Technical details

220mA 200mW 4.5Ω@1.5V 1V 2 N-Channel SOT-963-6 FET, MOSFET Arrays RoHS

Related FETs & Power MOSFETs