onsemi NTUD3169CZT5G

onsemi · FETs & Power MOSFETs · MPN NTUD3169CZT5G

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Specifications

Current - Continuous Drain(Id)220mA
RDS(on)5Ω@4.5V
Pd - Power Dissipation200mW
Gate Threshold Voltage (Vgs(th))1V
Drain to Source Voltage20V
TypeN-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds)2.6pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)13.5pF
Gate Charge(Qg)-
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)3.8pF

Technical details

N-Channel+P-Channel Array 20V 220mA 200mW Surface Mount SOT-963-6

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