onsemi NTTYS009N08HLTWG

onsemi · FETs & Power MOSFETs · MPN NTTYS009N08HLTWG

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Specifications

Gate Charge(Qg)24nC@10V
Drain to Source Voltage80V
Output Capacitance(Coss)10.5pF
Current - Continuous Drain(Id)58A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation73W
Reverse Transfer Capacitance (Crss@Vds)187pF
RDS(on)11mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)1.402nF
TypeN-Channel

Technical details

80V 58A 2V 73W 11mΩ@4.5V 1 N-channel N-Channel LFPAK-8 Single FETs, MOSFETs RoHS

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