onsemi · FETs & Power MOSFETs · MPN NTTFSS1D1N02P1E
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| Gate Charge(Qg) | 60nC@10V |
|---|---|
| Configuration | - |
| Drain to Source Voltage | 25V |
| Current - Continuous Drain(Id) | 264A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | - |
| Pd - Power Dissipation | 89W |
| Reverse Transfer Capacitance (Crss@Vds) | 80pF |
| RDS(on) | 0.85mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.36nF |
25V 264A 89W 0.85mΩ@10V 1 N-channel WDFN-9(3.3x3.3) Single FETs, MOSFETs RoHS