onsemi · FETs & Power MOSFETs · MPN NTTFS8D1N08HTAG
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| Gate Charge(Qg) | 9nC@6V |
|---|---|
| Drain to Source Voltage | 80V |
| Current - Continuous Drain(Id) | 61A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.8V |
| Pd - Power Dissipation | 63W |
| Reverse Transfer Capacitance (Crss@Vds) | 46pF |
| RDS(on) | 6.4mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.45nF |
80V 61A 2.8V 63W 6.4mΩ@10V 1 N-channel WDFN-8-EP(3.3x3.3) Single FETs, MOSFETs RoHS