onsemi · FETs & Power MOSFETs · MPN NTTFS6H850NTAG
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| Gate Charge(Qg) | 19nC@10V |
|---|---|
| Drain to Source Voltage | 80V |
| Current - Continuous Drain(Id) | 68A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 107W |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF |
| RDS(on) | 9.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.14nF |
N-Channel 80V 68A 107W Surface Mount WDFN-8(3.3x3.3)