onsemi NTTFS6H850NLTAG

onsemi · FETs & Power MOSFETs · MPN NTTFS6H850NLTAG

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Specifications

Gate Charge(Qg)26nC@10V
Drain to Source Voltage80V
Current - Continuous Drain(Id)14.8A;64A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation3.9W;73W
Reverse Transfer Capacitance (Crss@Vds)182pF
RDS(on)7.1mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.45nF

Technical details

80V 2V 7.1mΩ@10V 1 N-channel WDFN-8(3.3x3.3) Single FETs, MOSFETs RoHS

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