onsemi NTTFS5C658NLTAG

onsemi · FETs & Power MOSFETs · MPN NTTFS5C658NLTAG

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Specifications

Current - Continuous Drain(Id)109A
RDS(on)4.2mΩ@10V
Pd - Power Dissipation114W
Gate Threshold Voltage (Vgs(th))2.2V
Drain to Source Voltage60V
Reverse Transfer Capacitance (Crss@Vds)16pF
Number1 N-channel
Input Capacitance(Ciss)1.935nF
Gate Charge(Qg)12nC@4.5V
Operating Temperature-55℃~+175℃

Technical details

109A 4.2mΩ@10V 114W 2.2V 1 N-channel WDFN-8-EP(3.3x3.3) FET, MOSFET Arrays RoHS

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