onsemi · FETs & Power MOSFETs · MPN NTTFS5116PLTWG
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 25nC@10V |
| Current - Continuous Drain(Id) | 20A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 3.2W |
| Reverse Transfer Capacitance (Crss@Vds) | 84pF |
| RDS(on) | 52mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.258nF |
P-Channel 60V 20A 3.2W Surface Mount WDFN-8(3.3x3.3)