onsemi · FETs & Power MOSFETs · MPN NTTFS4H07NTAG
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| Gate Charge(Qg) | - |
|---|---|
| Drain to Source Voltage | 25V |
| Current - Continuous Drain(Id) | 66A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.1V |
| Pd - Power Dissipation | 33.8W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | - |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 771pF |
25V 66A 1.1V 33.8W 1 N-channel WDFN-5(3.3x3.3) Single FETs, MOSFETs RoHS