onsemi · FETs & Power MOSFETs · MPN NTTFS4H05NTAG
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| Gate Charge(Qg) | 18.9nC@10V |
|---|---|
| Drain to Source Voltage | 25V |
| Current - Continuous Drain(Id) | 94A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Pd - Power Dissipation | 46.3W |
| Reverse Transfer Capacitance (Crss@Vds) | 81pF |
| RDS(on) | 3.3mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.812nF |
25V 94A 1.2V 46.3W 3.3mΩ@10V 1 N-channel WDFN-5(3.3x3.3) Single FETs, MOSFETs RoHS