onsemi NTTFS4C13NTWG

onsemi · FETs & Power MOSFETs · MPN NTTFS4C13NTWG

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Specifications

Gate Charge(Qg)15.2nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)38A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.1V
Pd - Power Dissipation21.5W
Reverse Transfer Capacitance (Crss@Vds)127pF
RDS(on)9.4mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)770pF

Technical details

30V 38A 2.1V 21.5W 9.4mΩ@10V 1 N-channel WDFN-5(3.3x3.3) Single FETs, MOSFETs RoHS

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