onsemi NTTFS4C02NTAG

onsemi · FETs & Power MOSFETs · MPN NTTFS4C02NTAG

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Specifications

Gate Charge(Qg)45nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)1.2nF
Current - Continuous Drain(Id)170A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation91W
Reverse Transfer Capacitance (Crss@Vds)55pF
RDS(on)1.9mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.98nF
TypeN-Channel

Technical details

30V 170A 1.6V 91W 1.9mΩ@10V 1 N-channel N-Channel WDFN-8(3.3x3.3) Single FETs, MOSFETs RoHS

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