onsemi · FETs & Power MOSFETs · MPN NTTFS4939NTWG
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| Gate Charge(Qg) | 12.4nC@4.5V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 52A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Pd - Power Dissipation | 29.8W |
| Reverse Transfer Capacitance (Crss@Vds) | 20.2pF |
| RDS(on) | 4.1mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.979nF |
30V 52A 2.2V 29.8W 4.1mΩ@10V 1 N-channel WDFN-8(3.3x3.3) Single FETs, MOSFETs RoHS