onsemi NTTFS2D1N04HLTWG

onsemi · FETs & Power MOSFETs · MPN NTTFS2D1N04HLTWG

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Specifications

Gate Charge(Qg)43.6nC@10V
Drain to Source Voltage40V
Current - Continuous Drain(Id)150A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation83W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)3.3mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)2.745nF

Technical details

N-Channel 40V 150A 83W Surface Mount PQFN-8(3.3x3.3)

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