onsemi NTTFS1D8N02P1E

onsemi · FETs & Power MOSFETs · MPN NTTFS1D8N02P1E

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Specifications

Drain to Source Voltage25V
Gate Charge(Qg)17.1nC@10V
Current - Continuous Drain(Id)150A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation46W
Reverse Transfer Capacitance (Crss@Vds)41pF
RDS(on)1.3mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.98nF

Technical details

N-Channel 25V 150A 46W Surface Mount PQFN-8(3.3x3.3)

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