onsemi · FETs & Power MOSFETs · MPN NTTFS1D2N02P1E
No reviews yet — be the first to review onsemi NTTFS1D2N02P1E.
| Gate Charge(Qg) | 24nC@4.5V |
|---|---|
| Drain to Source Voltage | 25V |
| Current - Continuous Drain(Id) | 23A;180A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Pd - Power Dissipation | 820mW;52W |
| Reverse Transfer Capacitance (Crss@Vds) | 68pF |
| RDS(on) | 0.86mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.04nF |
25V 1.2V 0.86mΩ@10V 1 N-channel PQFN-8(3.3x3.3) Single FETs, MOSFETs RoHS