onsemi · FETs & Power MOSFETs · MPN NTTFS010N10MCLTAG
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| Gate Charge(Qg) | 30nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 50A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 52W |
| Reverse Transfer Capacitance (Crss@Vds) | 18pF |
| RDS(on) | 10.6mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.15nF |
100V 50A 3V 52W 10.6mΩ@10V 1 N-channel WDFN-5(3.3x3.3) Single FETs, MOSFETs RoHS