onsemi NTTFD9D0N06HLTWG

onsemi · FETs & Power MOSFETs · MPN NTTFD9D0N06HLTWG

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Specifications

Configuration-
Current - Continuous Drain(Id)38A
Pd - Power Dissipation26W
RDS(on)9mΩ@10V;13mΩ@4.5V
Gate Threshold Voltage (Vgs(th))2V
Drain to Source Voltage60V
Reverse Transfer Capacitance (Crss@Vds)12.3pF
Number2 N-Channel
Input Capacitance(Ciss)948pF
Gate Charge(Qg)13.5nC@10V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)188pF

Technical details

N-Channel Array 60V Surface Mount WDFN-12

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