onsemi · FETs & Power MOSFETs · MPN NTTFD2D8N03P1E
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| Current - Continuous Drain(Id) | 16.1A;80A |
|---|---|
| RDS(on) | 2.5mΩ@10V |
| Pd - Power Dissipation | 1.04W;26W |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Drain to Source Voltage | 30V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 1.5nF;1.521nF |
| Gate Charge(Qg) | 20.8nC@10V;20.5nC@10V |
| Operating Temperature | -55℃~+150℃ |
2.5mΩ@10V 3V 2 N-Channel WQFN-12(3.3x3.3) FET, MOSFET Arrays RoHS