onsemi · FETs & Power MOSFETs · MPN NTTFD021N08C
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| Current - Continuous Drain(Id) | 6A;24A |
|---|---|
| Pd - Power Dissipation | 1.7W;26W |
| RDS(on) | 21mΩ@10V |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Drain to Source Voltage | 80V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 572pF |
| Gate Charge(Qg) | 8.4nC@10V |
| Operating Temperature | -55℃~+150℃ |
21mΩ@10V 4V 2 N-Channel WQFN-12(3.3x3.3) FET, MOSFET Arrays RoHS