onsemi NTS4173PT1G

onsemi · FETs & Power MOSFETs · MPN NTS4173PT1G

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Specifications

Gate Charge(Qg)4.8nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)1.2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation290mW
Reverse Transfer Capacitance (Crss@Vds)40pF
RDS(on)280mΩ@2.5V
Number1 P-Channel
Input Capacitance(Ciss)430pF

Technical details

P-Channel 30V 1.2A 0.29W Surface Mount SC-70-3

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