onsemi NTS4101PT1G

onsemi · FETs & Power MOSFETs · MPN NTS4101PT1G

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Specifications

Gate Charge(Qg)9nC@4.5V
Drain to Source Voltage20V
Current - Continuous Drain(Id)1.37A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))450mV
Pd - Power Dissipation329mW
Reverse Transfer Capacitance (Crss@Vds)85pF
RDS(on)83mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)840pF

Technical details

P-Channel 20V 1.37A 0.329W Surface Mount SOT-323

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