onsemi NTRV4101PT1G

onsemi · FETs & Power MOSFETs · MPN NTRV4101PT1G

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Specifications

Gate Charge(Qg)8.5nC@4.5V
Drain to Source Voltage20V
Output Capacitance(Coss)100pF
Current - Continuous Drain(Id)3.2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation1.25W
Reverse Transfer Capacitance (Crss@Vds)75pF
RDS(on)112mΩ@1.8V
Number1 P-Channel
Input Capacitance(Ciss)675pF
TypeP-Channel

Technical details

P-Channel 20V 3.2A 1.25W Surface Mount SOT-23

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