onsemi NTR5105PT1G

onsemi · FETs & Power MOSFETs · MPN NTR5105PT1G

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Specifications

Gate Charge(Qg)1nC@5V
Drain to Source Voltage60V
Current - Continuous Drain(Id)211mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation403mW
RDS(on)6Ω@4.5V
Number1 P-Channel
Input Capacitance(Ciss)30.3pF
TypeP-Channel

Technical details

P-Channel 60V 211mA 403mW Surface Mount SOT-23

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