onsemi · FETs & Power MOSFETs · MPN NTR4170NT1G
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| Gate Charge(Qg) | 4.76nC@4.5V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 3.1A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.4V |
| Pd - Power Dissipation | 1.25W |
| Reverse Transfer Capacitance (Crss@Vds) | 37.1pF |
| RDS(on) | 110mΩ@2.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 432pF |
| Type | N-Channel |
N-Channel 30V 3.1A 1.25W Surface Mount SOT-23