onsemi NTR4101PT1H

onsemi · FETs & Power MOSFETs · MPN NTR4101PT1H

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)8.5nC@4.5V
Current - Continuous Drain(Id)3.2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation730mW
Reverse Transfer Capacitance (Crss@Vds)75pF
RDS(on)70mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)675pF

Technical details

P-Channel 20V 3.2A 0.73W Surface Mount SOT-23-3

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