onsemi · FETs & Power MOSFETs · MPN NTR2101PT1G
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 15nC@4.5V |
| Drain to Source Voltage | 8V |
| Output Capacitance(Coss) | 289pF |
| Current - Continuous Drain(Id) | 3.7A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 960mW |
| Reverse Transfer Capacitance (Crss@Vds) | 218pF |
| RDS(on) | 120mΩ@1.8V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.173nF |
P-Channel 8V 3.7A 0.96W Surface Mount SOT-23