onsemi NTR2101PT1G

onsemi · FETs & Power MOSFETs · MPN NTR2101PT1G

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Specifications

Configuration-
Gate Charge(Qg)15nC@4.5V
Drain to Source Voltage8V
Output Capacitance(Coss)289pF
Current - Continuous Drain(Id)3.7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation960mW
Reverse Transfer Capacitance (Crss@Vds)218pF
RDS(on)120mΩ@1.8V
Number1 P-Channel
Input Capacitance(Ciss)1.173nF

Technical details

P-Channel 8V 3.7A 0.96W Surface Mount SOT-23

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