onsemi · FETs & Power MOSFETs · MPN NTR1P02LT1G
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| Gate Charge(Qg) | 3.1nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Output Capacitance(Coss) | - |
| Current - Continuous Drain(Id) | 1.3A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.25V |
| Pd - Power Dissipation | 400mW |
| Reverse Transfer Capacitance (Crss@Vds) | 55pF |
| RDS(on) | 220mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 225pF |
| Type | P-Channel |
P-Channel 20V 1.3A 400mW Surface Mount SOT-23