onsemi NTR1P02LT1

onsemi · FETs & Power MOSFETs · MPN NTR1P02LT1

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)3.1nC@4.5V
Output Capacitance(Coss)130pF
Current - Continuous Drain(Id)1.3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.25V
Pd - Power Dissipation400mW
Reverse Transfer Capacitance (Crss@Vds)55pF
RDS(on)220mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)225pF
TypeP-Channel

Technical details

20V 1.3A 1.25V 400mW 220mΩ@4.5V 1 P-Channel P-Channel SOT-23-3(TO-236-3) Single FETs, MOSFETs

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